铌酸锂(LiNbO3)晶体 Wafer

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Specification for 铌酸锂(LiNbO3)晶体 Wafer

                       
Grade Dimeter

Type/dopant

Orientaion

crystal struction spectrum penetrate wave length spectrum refraction rate Resistivity(1) Resistivity(2)

Flat

Surface/Roughness Geometric parameter
铌酸锂(LiNbO3)晶体 wafer

25.4mm 50.8mm 76.5mm 100mm

Zn/Er/intrinsic

X Y Z cut

Trigonal 0.4~2.90μm n0=2.286 ne=2.203 @632.8nm 1 - 9 *E10 ohm-cm   N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
钽酸锂(LiTaO3)晶体 wafer 25.4mm 50.8mm 76.5mm 100mm intrinsic/Mg/Fe X Y Z cut hexagonal 0.4~5.0 um no = 2.176  ne= 2.180 @ 633 nm 0.9 - 9 *E11 ohm-cm

1.0*E11 - 9.9 *E19 ohm-cm

N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
锗酸铋(Bi4Ge3O12)晶体 wafer 25.4mm 50.8mm 76.5mm 100mm intrinsic/Mg/Fe X Y Z cut hexagonal 0.4~5.0 um no = 2.176  ne= 2.180 @ 633 nm 0.9 - 9 *E11 ohm-cm

1.0*E11 - 9.9 *E19 ohm-cm

N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um
硅酸铋(BOS)晶体 wafer 25.4mm 50.8mm 76.5mm 100mm intrinsic/Mg/Fe X Y Z cut hexagonal 0.4~5.0 um no = 2.176  ne= 2.180 @ 633 nm 0.9 - 9 *E11 ohm-cm

1.0*E11 - 9.9 *E19 ohm-cm

N/A 16mm 22.5mm 32.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 10um Warp < 20um