FZ/MCZ Growth Siliocn Wafer

WaferHome can manufacture the high quality FZ/MCZ Growth Siliocn Wafer

Specification for FZ/MCZ Growth Siliocn Wafer

                       
Grade Dimeter

Type/dopant

Orientaion

carborn 10*E-6 oxygen 10*E-6 lifetime /us thickness Resistivity

Flat

Surface/Roughness Geometric parameter
FZ growth prime wafer 25.4mm 50.8mm 76.5mm P(Boron) N(Phos/As/Sb) intrinsic

<100> <111> or special orientation

<=0.2 <=0.1 300 - 1*10E4 400um+/-20 400um+/- 20 400um+/-20

1 - 15000 Ohm-cm /Customization

N/A 16mm 22.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um
100mm 125mm 150mm P(Boron) N(Phos/As/Sb) intrinsic <100> <111> or special orientation <=0.2 <=0.1 300 - 1*10E4 525um+/-20 625um+/-20 625um+/-20 1 - 15000 Ohm-cm /Customization 32.5mm 42.5mm 57.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um
200mm P(Boron) N(Phos/As/Sb) intrinsic <100> <111> or special orientation <=0.2 <=0.1 300 - 1*10E4 725um+/-20 1 - 15000 Ohm-cm /Customization nothch/flat polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um
300mm P(Boron) N(Phos/As/Sb) intrinsic <100> <111> or special orientation <=0.2 <=0.1 300 - 1*10E4 775um+/-20 1 - 15000 Ohm-cm /Customization notch/flat polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um
MCZ growth prime wafer 25.4mm 50.8mm 76.5mm P(Boron) N(Phos/As/Sb) intrinsic

<100> <111> or special orientation

5 - 15 <=0.2 50 - 1*10E4 200um+/- 20 100um+/-20 customization

1 - 500 Ohm-cm /Customization

N/A 16mm 22.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um
100mm 125mm 150mm P(Boron) N(Phos/As/Sb) intrinsic <100> <111> or special orientation 5 - 15 <=0.2 50 - 1*10E4 100um+/-20 200um+/- 20 customization 1 - 500 Ohm-cm /Customization 32.5mm 42.5mm 57.5mm polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um
200mm P(Boron) N(Phos/As/Sb) intrinsic <100> <111> or special orientation 5 - 15 <=0.2 50 - 1*10E4 100um+/-20 200um+/- 20 customization 1 - 500 Ohm-cm /Customization notch/flat polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um
300mm P(Boron) N(Phos/As/Sb) intrinsic <100> <111> or special orientation 5 - 15 <=0.2 50 - 1*10E4 100um+/-20 200um+/- 20 customization 1 - 500 Ohm-cm /Customization notch/flat polished/etched polished/polished TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um